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An 80-GHz six-stage common source tuned amplifier has been demonstrated using low leakage (higher VT) NMOS transistors of a 65-nm digital CMOS process with six metal levels. It achieves power gain of 12 dB at 80 GHz with a 3-dB bandwidth of 6 GHz, noise figures (NF's) lower than 10.5 dB at frequencies between 75 and 81 GHz with the lowest NF of 9 dB. IP1 dB is -21 dBm and IIP3 is -11.5 dBm. The amplifier consumes 27 mA from a 1.2 V supply. At VDD = 1.5 V and 33 mA bias current, NF is less than 9.5 dB within the 3-dB bandwidth and reaches a minimum of 8 dB at 80 GHz.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:18
,
Issue:
2
)
Date of Publication: Feb. 2008
- Page(s):
- 121 - 123
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 9794280
- Digital Object Identifier :
- 10.1109/LMWC.2007.915131
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 February 2008
- Issue Date :
- Feb. 2008
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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