Referenced Items are not available for this document.
This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:18
,
Issue:
2
)
Date of Publication: Feb. 2008
- Page(s):
- 124 - 126
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 9794269
- Digital Object Identifier :
- 10.1109/LMWC.2007.915132
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 February 2008
- Issue Date :
- Feb. 2008
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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