By Topic

Low temperature ion beam sputter deposition of amorphous silicon carbide for wafer-level vacuum sealing

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

This paper presents a novel low temperature, wafer-level vacuum sealing method that uses line-of-sight deposition of amorphous SiC with ion beam sputter deposition. The ion beam sputter deposition system allows substrate tilting for off-normal deposition and operates with a pressure of approximately 3 times 10-6 torr during deposition. The amorphous SiC films have demonstrated compressive intrinsic stresses for growth rates between 0.06 - 0.13 nm/min test scaffold structures were fabricated by etching holes and trenches into bare Si wafers. The topography of sealing films deposited on the test scaffold structures shows that the film growth is directional with no visible down-hole deposition. The termination of the seal and the chemical resistance of the sealing films have been confirmed with a hot KOH immersion experiment.

Published in:

Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on

Date of Conference:

21-25 Jan. 2007