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Superior n-MOSFET performance by optimal stress design

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6 Author(s)
Yang, Y.-J. ; Nat. Taiwan Univ., Taipei ; Liao, M. ; Liu, C.W. ; Lingyen Yeh
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In this article we present detailed stress simulation characterization of the 3-D boundary effects and show that the high-performance n FET can be achieved by the ultra-high-stress CESL stressor and optimal geometric structure design. A symmetric structure which results in the biaxial- like stress is favored for n FET in terms of Ion, Bsat rsat, and vnj. The comprehensive study helps the future device circuit design and remains valid for future technology node of 22 nm.

Published in:

Semiconductor Device Research Symposium, 2007 International

Date of Conference:

12-14 Dec. 2007