Referenced Items are not available for this document.
A process design based on a nanowire structure is demonstrated with the fabrication of metallic single-electron transistors. The method is capable of subattofarad resolution resulting in transistors that exhibited Coulomb blockade up to approximately 430 K. An analysis showed that these devices have sufficient operational margin to sustain process fluctuations and still operate within the temperature limits of conventional silicon field effect transistors.
Published in:
Nanotechnology, IEEE Transactions on
(Volume:7
,
Issue:
1
)
Date of Publication: Jan. 2008
- Page(s):
- 68 - 73
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 9742979
- Digital Object Identifier :
- 10.1109/TNANO.2007.913430
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 14 January 2008
- Issue Date :
- Jan. 2008
- Sponsored by :
- IEEE Nanotechnology Council
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