Skip to Main Content
10 kV power 4H-SiC DiMOSFET and PIN diodes are currently under development by a number of organizations in the United States with the aim to enable their application in high voltage high frequency power conversion applications. The aim of this study is to obtain key device characteristics of these devices through device simulation so that realistic application prospect of these devices can be provided. In particular, the emphasis is on obtaining loss characteristics of these devices as well as solving issues that limit their applications. One identified issue is the dV/dt induced false turn on in 10 kV 4H-SiC MOSFET. One approach to solve this problem is proposed. Based on these understandings, the prospect of using these devices in a high voltage (24 kV) high frequency (20 kHz) DC/DC converter is discussed.