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Characteristics of 10 kV SiC MOSFET and PIN Diode and Their Application Prospect in High Voltage High Frequency DC/DC Converter

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4 Author(s)
Jun Wang ; North Carolina State Univ., Raleigh ; Liyu Yang ; Tiefu Zhao ; Huang, A.Q.

10 kV power 4H-SiC DiMOSFET and PIN diodes are currently under development by a number of organizations in the United States with the aim to enable their application in high voltage high frequency power conversion applications. The aim of this study is to obtain key device characteristics of these devices through device simulation so that realistic application prospect of these devices can be provided. In particular, the emphasis is on obtaining loss characteristics of these devices as well as solving issues that limit their applications. One identified issue is the dV/dt induced false turn on in 10 kV 4H-SiC MOSFET. One approach to solve this problem is proposed. Based on these understandings, the prospect of using these devices in a high voltage (24 kV) high frequency (20 kHz) DC/DC converter is discussed.

Published in:

Power Electronics Specialists Conference, 2007. PESC 2007. IEEE

Date of Conference:

17-21 June 2007

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