By Topic

Performance of Silicon Surface Barrier Detectors with Charge Sensitive Amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Blankenship, J.L. ; Instrumentation and Controls Division Oak Ridge National Laboratory Oak Ridge, Tennessee ; Borkowski, C.J.

Silicon surface barrier diode detectors of 1 cm2 and 25 mm2 sensitive area have given pulse height spectral resolutions of 17 kev and 13-¿ kev (FWHM) respectively, for 5.5 mev alpha particles. Reverse currents at 500 volts bias were less than 1 × 10-6 amps/cm2 with breakdown in excess of 1000 volts. A charge sensitive amplifier contributes 3-¿ and 10 kev noise (FWHM) with an input capacitive loading of 20 and 180 pf respectively.

Published in:

Nuclear Science, IRE Transactions on  (Volume:8 ,  Issue: 1 )