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Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI/sup 2/L technology

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3 Author(s)
Plumton, D.L. ; Texas Instrum. Inc., Dallas, TX, USA ; Chang, C.T.M. ; Woods, B.O.

A process that integrates isolated-emitter heterojunction bipolar transistors (HBTs) with common-emitter HBTs in the emitter-down epi structure on n/sup +/ substrates is discussed. Overgrowth of the epi onto a p/sup -/ implanted region results in back-to-back diodes for approximately 12-V vertical isolation. Isolated transistors are used in emitter-follower output buffers for heterojunction injection logic (HI/sup 2/L) ring oscillators, demonstrating the integration of the two transistor types.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 11 )

Date of Publication:

Nov. 1989

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