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An empirical model that describes the dependence of hot-carrier lifetime on the effective channel length of an n-channel MOSFET, allowing the estimation of the lifetimes of transistors of a given length based on data from a limited number of channel lengths, is presented. The model takes into account the localization of hot-carrier induced damage and shows that the size of the damaged region relative to the total length of the transistor is important in determining the effect of hot-carrier-damage-induced transistor characteristics. The results are integrated into two commonly used equations for hot-carrier lifetimes of MOSFETs of a given channel length under DC operation. The model is experimentally verified for MOSFETs of effective channel lengths between 0.45 and 2.7 mu m.<
Published in:
Electron Device Letters, IEEE
(Volume:10
,
Issue:
11
)
Date of Publication: Nov. 1989
- Page(s):
- 500 - 502
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 3582752
- Digital Object Identifier :
- 10.1109/55.43116
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1989
- Sponsored by :
- IEEE Electron Devices Society
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