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A new technique for determining the generation lifetime profile in thin semiconductor films with application to silicon-on-insulator (SOI) substrates

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4 Author(s)
Chen, H.S. ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA ; Brady, F.T. ; Li, S.S. ; Krull, W.A.

A differential technique which uses reverse-biased current-voltage (I-V) and capacitance-voltage (C-V) measurements on a p-n junction or a Schottky barrier diode for determining the generation lifetime profile in thin semiconductor films is discussed. It is shown that the bias-independent current can be eliminated by this differential technique. Furthermore, any error caused by field-enhanced current can be estimated. This method has been used to determine the generation lifetime profile in thin silicon epitaxial film grown on SIMOX substrates.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 11 )