By Topic

Electrical characterization of a JFET-accessed GaAs dynamic RAM cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
P. G. Neudeck ; Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA ; T. E. Dungan ; M. R. Melloch ; J. A. Cooper

A complete one-transistor dynamic RAM cell in GaAs is discussed. Read and write operations is monitored by observing the capacitance of the storage node. Storage times on the order of a few seconds are obtained at room temperature with an activation energy slightly less than half the zero-temperature bandgap.<>

Published in:

IEEE Electron Device Letters  (Volume:10 ,  Issue: 11 )