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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:28 Issue:8 Help

35-nm Zigzag T-Gate \hbox {In}_{0.52}\hbox {Al}_{0.48} \hbox {As/In}_{0.53}\hbox {Ga}_{0.47}\hbox {As} Metamorphic GaAs HEMTs With an Ultrahigh f_{\max } of 520 GHz

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4 Author(s)
Kang-Sung Lee ; Pohang Univ. Sci. of & Technol., Pohang ; Young-Su Kim ; Yun-Ki Hong ; Yoon-Ha Jeong

Metamorphic GaAs high electron mobility transistors (mHEMTs) with the highest-f max reported to date are presented here. The 35-nm zigzag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs show f maxof 520 GHz, f T of 440 GHz, and maximum transconductance (g m) of 1100 mS/mm at a drain current of 333 mA/mm. The combinations of f max and f T are the highest data yet reported for mHEMTs. These devices are promising candidates for aggressively scaled sub-35-nm T-gate mHEMTs.

Published in:
Electron Device Letters, IEEE  (Volume:28 ,  Issue: 8 )

Date of Publication: Aug. 2007

Page(s):
672 - 675
ISSN :
0741-3106
INSPEC Accession Number:
9906028
Digital Object Identifier :
10.1109/LED.2007.901579
Product Type:
Journals & Magazines
Date of Current Version :
23 July 2007
Issue Date :
Aug. 2007
Sponsored by :
IEEE Electron Devices Society

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