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Metamorphic GaAs high electron mobility transistors (mHEMTs) with the highest-f max reported to date are presented here. The 35-nm zigzag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs show f maxof 520 GHz, f T of 440 GHz, and maximum transconductance (g m) of 1100 mS/mm at a drain current of 333 mA/mm. The combinations of f max and f T are the highest data yet reported for mHEMTs. These devices are promising candidates for aggressively scaled sub-35-nm T-gate mHEMTs.
Date of Publication: Aug. 2007