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1.3–1.55-μ m CMOS/InP Optoelectronic Receiver Using a Self-Aligned Wafer Level Integration Technology

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2 Author(s)
Sharifi, H. ; Purdue Univ., West Lafayette ; Mohammadi, S.

A heterogeneous 10-Gb/s 1.3- to 1.55-mum optoelectronic receiver is designed and fabricated using a complementary metal-oxide-semiconductor transimpedance amplifier and an InGaAs-InP PIN (p-type, intrinsic, n-type diode) photodiode. The receiver is heterogeneously integrated based on a batch fabrication process which promises low fabrication cost. The receiver measures a transimpedance gain of higher than 50 dBldrOmega over a bandwidth of 6 GHz and demonstrates an open eye diagram with a 1.55-mum 10-Gb/s light source.

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 14 )