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Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off

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13 Author(s)
Huang-Chun Wen ; SEMATECH, 2706 Montopolis Drive, Austin, Texas, U.S.A; The University of Texas at Austin, Department of Electrical and Computer Engineering, Huang-Chun.Wen@sematech.org ; Kisik Choi ; C. S. Park ; Prashant Majhi
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Issues associated with the integration of p-type band-edge (5.0~5.2 eV) effective work function (EWF) electrodes are identified and discussed. The Fermi-level (Ef) pinning effect traditionally used to explain the lowering of p-MOS EWF is believed not to be an intrinsic limitation. However, a new described as the "flatband (Vfb,) rolloff effect" is shown to be the dominant factor.

Published in:

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

Date of Conference:

23-25 April 2007