Novel SONOS-Type Nonvolatile Memory Device with Suitable Band Offset in HfAlO Charge-Trapping Layer

Satisfactory operation and reliability characteristics of SONOS-type flash devices are achieved by an optimal Hf/Al content in HfAlO charge-trapping layer. Results indicate that operation performance can be improved by a suitable band offset of HfAlO charge-trapping layer. High-speed operation can be realized by adopting CHEI programming and F-N erasing for NOR flash applications.