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A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices

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13 Author(s)
Sheng-Chih Lai ; Macronix International Company Ltd., Hsinchu, Taiwan, R.O.C.; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, R.O.C., E-mail: ; Hang-Ting Lue ; Jung-Yu Hsieh ; Ming-Jui Yang
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The erase and retention characteristics of MONOS, MANOS and BE-SONOS devices are examined in detail in order to determine their mechanisms. The erase transient current (J) is extracted and plotted against the tunnel oxide electric field (ETUN). Our results show that the erase speed ranking is BE-SONOS > MANOS > MONOS. The difference in erase speed comes from the different erase mechanisms of these devices. The retention characteristics are also compared and discussed.

Published in:

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

Date of Conference:

23-25 April 2007