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Achieving Conduction Band-Edge Effective Work Functions by La2O3 Capping of Hafnium Silicates

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11 Author(s)

Conduction band-edge effective work functions (phim,eff ) are demonstrated with TaCx and TiN by means of La2O3 capping of HfSiOx in a gate-first process flow with CMOS-compatible thermal budget. With TaCx, a 10- Aring-thick La2O3 cap results in a phi m,eff of 3.9 eV with a low equivalent oxide thickness (EOT) increase (1-2 Aring) and unaffected electron mobility. With TiN, non-nitrided La2O3 capping results in a smaller phim,eff reduction at a larger EOT increase, while with post-cap nitridation, the TiN phim,eff is lower at a smaller EOT increase. Results show that the choice of metal and nitridation conditions have significant effects on La2O3 capped stacks

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 6 )