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Sensitivity Controllable CMOS Image Sensor Pixel Using Control Gate Overlaid on Photodiode

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4 Author(s)

A new sensitivity controllable pixel structure is proposed for CMOS active-pixel image sensor. The proposed pixel structure has a sensitivity control gate overlaid on the photodiode. The sensitivity of the pixel is controlled by the bias voltage of the control gate that forms a variable accumulation-mode MOS capacitor. The prototype sensor is fabricated with a 0.35-mum CMOS process and consists of 60 times 240 pixels with 5.6-mum pixel pitch. Measurement results show that the sensitivity of the photodiode can be controlled by a factor of 4.

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Electron Device Letters, IEEE  (Volume:28 ,  Issue: 6 )