Referenced Items are not available for this document.
A new sensitivity controllable pixel structure is proposed for CMOS active-pixel image sensor. The proposed pixel structure has a sensitivity control gate overlaid on the photodiode. The sensitivity of the pixel is controlled by the bias voltage of the control gate that forms a variable accumulation-mode MOS capacitor. The prototype sensor is fabricated with a 0.35-mum CMOS process and consists of 60 times 240 pixels with 5.6-mum pixel pitch. Measurement results show that the sensitivity of the photodiode can be controlled by a factor of 4.
Published in:
Electron Device Letters, IEEE
(Volume:28
,
Issue:
6
)
Date of Publication: June 2007
- Page(s):
- 495 - 498
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9913309
- Digital Object Identifier :
- 10.1109/LED.2007.897459
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 29 May 2007
- Issue Date :
- June 2007
- Sponsored by :
- IEEE Electron Devices Society
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