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High Brightness GaN-Based Light-Emitting Diodes

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4 Author(s)
Ya-Ju Lee ; Dept. of Photonic & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu ; Tien-Chang Lu ; Hao-Chung Kuo ; Shing-Chung Wang

This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces

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Display Technology, Journal of  (Volume:3 ,  Issue: 2 )