Skip to Main Content
During programming of a phase-change memory cell, the material is locally heated up to high temperatures (>600degC), to induce phase transitions as crystallization (SET) or amorphization by quenched cooling (RESET). In this work, the thermo-mechanical stresses induced in a line-type phase-change memory cell were examined using electrical-thermal-mechanical coupled finite-element simulation. Specific procedures are described, for implementing particular mechanical characteristics of the phase-change material, i.e. the volume change on crystallization, the relaxation and the phase-dependent Young moduli. Their respective effects during SET and RESET programming are investigated.
Date of Conference: 16-18 April 2007