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1/f Noise in Carbon Nanotube Devices—On the Impact of Contacts and Device Geometry

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5 Author(s)
Joerg Appenzeller ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY ; Yu-Ming Lin ; Joachim Knoch ; Zhihong Chen
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We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude A and the sample resistance R. By contacting semiconducting tubes with different metal electrodes we are able to show that a small A/R value by itself is no indication of a suitable metal/tube combination for logic applications. We discuss how current in a nanotube transistor is determined by the injection of carriers at the electrode/nanotube interface, while at the same time excess noise is related to the number of carriers inside the nanotube channel. In addition, we demonstrate a substantial reduction in noise amplitude for a tube transistor with multiple carbon nanotubes in parallel

Published in:

IEEE Transactions on Nanotechnology  (Volume:6 ,  Issue: 3 )