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High Stability, Low Leakage Nanocrystalline Silicon Bottom Gate Thin Film Transistors for AMOLED Displays

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3 Author(s)
Esmaeili-Rad, M.R. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont. ; Sazonov, A. ; Nathan, A.

We report performance characteristics of nanocrystalline silicon thin-film transistors (TFTs) fabricated at 280 degC by plasma-enhanced chemical vapor deposition. The TFTs exhibit field-effect mobility of 0.8 cm2V-1s-1, threshold voltage of 4 V, on/off current ratio about 108 with an off-current of 10-13 A, and subthreshold slope of 0.8 V/dec. Bias stress measurements show that the TFT is 3-5 times more stable than the hydrogenated amorphous silicon (a-Si:H) counterpart, with a shift in threshold voltage that is less than 5 % at a gate voltage of 15 V

Published in:
Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference: 11-13 Dec. 2006

Page(s):
1 - 4
E-ISBN :
1-4244-0439-8
Print ISBN:
1-4244-0439-8
INSPEC Accession Number:
9506449
Conference Location :
San Francisco, CA
Digital Object Identifier :
10.1109/IEDM.2006.346768
Product Type:
Conference Publications

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