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Effect of Fluorine Incorporation on 1/f Noise of HfSiON FETs for Future Mixed-Signal CMOS

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2 Author(s)
Yuri Yasuda ; Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94702; Advanced Device Development Division, NEC Electronics Corporation. Tel: +1-510-643-2638, Fax: +1-510-643-2636, E-mail: ; Chenming Hu

An effect of fluorine incorporation into HfSiON on 1/f noise is shown for the first time. Fluorine effect on 1/f noise for SiON and HfSiON devices differ in that F does not improve the HfSiON N-FET 1/f noise. Apparently, the interface traps created by Hf close to the conduction band cannot be passivated by fluorine. For future analog/mixed -signal applications, HfSiON P-FET is expected to limit noise performance even though F can improve its noise

Published in:

2006 International Electron Devices Meeting

Date of Conference:

11-13 Dec. 2006