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Universal Relationship between Low-Field Mobility and High-Field Carrier Velocity in High-K and SiO2 Gate Dielectric MOSFETs

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2 Author(s)
Masumi Saitoh ; Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan, Tel: +81-45-770-3273, Fax: +81-45-770-3286, E-mail: ; Ken Uchida

The relationships between velocity, v, and mobility, μ, are investigated to clarify the effectiveness of μ enhancement to increase v in short channel FETs with SiO2 as well as high-K gate dielectric. The v-μ relationships were extracted on the basis of accurate understanding of v-μ dependence of μ; vsub dependences of μ in high-K, high Nsub, and short-channel FETs were carefully studied and the deviations from the standard Vsub dependence were found in each case. It was found that v-μ relationship is universal, namely independent of gate dielectrics, in Si nFETs with Leff of down to 80 nm. Due to lower μ and resultant weaker v saturation in high-K FETs, μ booster technologies more significantly contribute to v and Ion enhancements in short-channel high-K FETs than in SiO2 FETs

Published in:

2006 International Electron Devices Meeting

Date of Conference:

11-13 Dec. 2006