State of the art Integrated InGaP/GaAs HBT-DRO with -124 dBc/Hz at 6.7 GHz

We report on the design of an ultra-low noise GaInP/ GaAs HBT DRO working at 6.7 GHz. Experimental results give a PM noise of - 124 dBc/Hz at 10 kHz off-carrier. A comparison has been performed with a SiBJT DRO using strictly the same oscillator topology. We obtain at least 14 dB improvement wit HBT DRO, demonstrating the superiority of the HBT to produce high quality low phase noise microwave sources.