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A review of the SOI four-gate transistor

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3 Author(s)
Sorin Cristoloveanu ; Inst. of Microelectron., IMEP, Grenoble ; Kerem Akarvardar ; Pierre Gentil

Recent results on the characterization and applications of the SOI four-gate transistor (G4-FET) are reviewed. The advantages provided by four independent gates are discussed by distinguishing different operation modes: volume (depletion-all-around) and surface conduction. Several examples highlight the potential of the G4-FET for analog applications

Published in:

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

Date of Conference:

23-26 Oct. 2006