Referenced Items are not available for this document.
In this paper, we demonstrate an integratable single metal gate (TiSiN) on HfxSixOy with dual work functions (4.44eV and 4.83eV), achieved by varying the metal thickness. These structures may be used for FD-SOI and double gate ultra-thin body devices. Close to symmetric Vt is achieved: 0.32V and -0.37V for long channel FD-SOI nMOS and pMOS devices, respectively. The device shows good sub-threshold slope values, as low as 62mV/dec and 75mV/dec for 1mum and 0.2mum devices, respectively
Published in:
International SOI Conference, 2006 IEEE
Date of Conference: 2-5 Oct. 2006
- Page(s):
- 25 - 26
- ISSN :
- 1078-621X
- E-ISBN :
- 1-4244-0290-5
- Print ISBN:
- 1-4244-0289-1
- INSPEC Accession Number:
- 9220715
- Conference Location :
- Niagara Falls, NY
- Digital Object Identifier :
- 10.1109/SOI.2006.284414
- Product Type:
- Conference Publications
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