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Fully Depleted SOI Technology for Ultra Low Power Digital and RF Applications

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4 Author(s)
Akira Uchiyama ; Semiconductor R&D Division, Oki Electric Industry Co., Ltd., Tokyo, Japan. Email:, Tel: +81-42-662-6104 ; Shunsuke Baba ; Yoshiki Nagatomo ; Jiro Ida

Today, various specifications are demanded to LSI, which is indispensable for industry and our life. For example, in the field of mobile equipments, watch and sensor devices in ubiquitous network, low-power-consumption devices are required. On the other hand, in the field of high-end processing, high performance devices are required. Silicon-on-insulator (SOI) devices have various advantages over bulk Si devices in the above-mentioned fields (Colingue, 2004). SOI-based sensors have also been introduced (Wan, 2005). In this paper, aiming for ultra-low-power digital analog and RF applications, we present major characteristics and issues of fully-depleted SOI (FD-SOI), and discuss the approaches to expanding the capability of FD-SOI devices

Published in:

2006 IEEE international SOI Conferencee Proceedings

Date of Conference:

2-5 Oct. 2006