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Modeling of Defect Evolution and TED under Stress based on DFT Calculations

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4 Author(s)
Guo, H.-W. ; Dept. of Electr. Eng., Univ. of Washington, Seattle, WA ; Dunham, Scott T. ; Shih, C.-L. ; Ahn, Chihak

The incorporation of strain in order to improve mobility has become an important element in CMOS device scaling. In this work, we have developed a new moment-based model of extended defect kinetics and further studied the impact due to stress on the energies of impurities, point defects and particularly extended defects. We specifically look at point defect clusters which control transient enhanced diffusion (TED). The results enable comprehensive models for dependence of nanoscale device structures on stress which can be used for process optimization

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006

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