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Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon

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4 Author(s)
Karlowatz, G. ; Inst. for Microelectron., TU Wien ; Ungersboeck, E. ; Wessner, W. ; Kosina, H.

Full-band Monte Carlo simulations of electron transport in bulk silicon under several strain conditions are performed. The band structures of Si for arbitrary stress and strain conditions are calculated using the empirical non-local pseudopotential method. To restrict the EPM calculation to the smallest possible domain the symmetry properties for a given stress condition are taken into account. Results for biaxially strained Si grown on a [001] oriented Si1-x Gex substrate and for uniaxial tensile stress in [110] direction exhibit a high mobility enhancement. The effective masses and the energy splitting of the valleys extracted from the band structure explain the mobility gain observed in the simulation results. It is shown that the effective masses can change considerably under certain stress conditions

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006

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