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Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

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5 Author(s)
Hane, M. ; Syst. Devices Res. Lab., NEC Corp., Sagamihara ; Ikezawa, T. ; Kawada, M. ; Ezaki, T.
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Strain effects on different crystallographic channel silicon nMOSFETs have been investigated by using a self-consistent quantum mechanical full-band (multi-subband) Monte Carlo (MC) device simulation. Simulation results show that the nMOSFET drain-current increases with applying uniaxial tensile stress while it exhibits different behavior for lang100rang and lang110rang different channel directions. Further detailed analyses have been made to clarify appropriate physical mechanism of the drive-current-increase by means of a source-side-injection/backscattering concept

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006

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