Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors

Based on the nonequilibrium Green's function formalism, we study the influence of electron-phonon interactions on the electronic transport in silicon nanowire transistors as we change the channel length from 7 to 45 nm. Intravalley and intervalley phonon scattering mechanisms are taken into account in the simulation. The validity of the pure quantum ballistic transport model and the semi-classical drift-diffusion model for different channel lengths is also discussed