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Operating characteristics of InGaAs-GaAs MQW hetero-nipi waveguide modulators

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6 Author(s)
Koehler, S.D. ; Center for Laser Studies, Univ. of Southern California, Los Angeles, CA, USA ; Garmire, E.M. ; Kost, A.R. ; Yap, D.
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We report frequency response measurements of optical MQW nipi waveguide modulators, observing a -3-dB bandwidth as high as 110 MHz. These devices have only 900-/spl Aring/-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption modulation (32 dB) and a phase change figure of merit as low as V/sub /spl pi///spl times/L=0.8 V mm at a detuning of 115 meV below the photoluminescence peak. We compare ion-implanted selective contacts with traditional selective metal contacts.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 8 )