Cart (Loading....) | Create Account
Close category search window
 

High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion-etching technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Higashi, T. ; Opt. Semicond. Devices Lab., Fujitsu Labs. Ltd., Kanagawa, Japan ; Takeuchi, T. ; Morito, K. ; Matsuda, M.
more authors

We fabricated 1.5-/spl mu/m semi-insulating buried heterostructure (SI-BH) lasers with InGaAsP-InP strained-layer multiple-quantum wells using a reactive ion etching (RIE) technique for mesa definition. A very high CW operating temperature of 150/spl deg/C was obtained in a 300-/spl mu/m-long laser whose rear facet was HR-coated.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 8 )

Date of Publication:

Aug. 1995

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.