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Applying a submicron mismatch model to practical IC design

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5 Author(s)
Guardiani, C. ; SGS-Thomson Microelectron., Agrate Brianza, Italy ; Tomasini, A. ; Benkoski, J. ; Quarantelli, M.
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A model of the mismatch effect in IC devices is presented that extends the validity of existing models to the sub-micron region. Unlike in previous studies the effect of a finite two dimensional correlation length is taken into account, thus allowing a good reproduction of the differences in device variance that occur for different aspect ratios. The model has been characterized on a 0.75 μ CMOS technology and has been implemented in a powerful CAD system for statistical design analysis, thus being of practical utility for IC designers when making critical design considerations and trade-offs

Published in:

Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994

Date of Conference:

1-4 May 1994

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