By Topic

Modeling buffer layer IGBTs for circuit simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Hefner, Allen R. ; Semiconductor Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

The dynamic behavior of commercially available buffer layer IGBTs is described. It is shown that buffer layer IGBTs become much faster at high voltages than nonbuffer layer IGBTs with similar low voltage characteristics. Because the fall times specified in manufacturers' data sheets do not reflect the voltage dependence of switching speed, a new method of selecting devices for different circuit applications is suggested. A buffer layer IGBT model is developed and implemented into the Saber circuit simulator, and a procedure is developed to extract the model parameters for buffer layer IGBTs. It is shown that the new buffer layer IGBT model can be used to describe the dynamic behavior and power dissipation of buffer layer IGBTs in user-defined application circuits. The results of the buffer layer IGBT model are verified using commercially available IGBTs

Published in:

Power Electronics, IEEE Transactions on  (Volume:10 ,  Issue: 2 )