Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

A 0.8nV/√Hz CMOS preamplifier for IC-magneto-resistive read elements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Klein, Hans W. ; Hacienda Design Lab., IMP Inc., Pleasanton, CA, USA ; Robinson, M.E.

The first CMOS preamplifier IC for magnetoresistive (MR) read elements for use in state-of-the-art tape drives is presented. The circuit's noise performance of 0.8 nV/√Hz includes noise contributions from both the amplifier and the integrated current source needed to bias the MR elements. It will be shown that a single-ended input architecture is highly attractive for MR preamps because it offers advantages such as lowest noise levels and substantially reduced power and area consumption. Also, a current-mode amplifier (CMA) has been developed to enhance the preamp's bandwidth, large-signal capability and PSRR. The quad preamp has been implemented in a 1.2 μm CMOS process and measures 4.5×4.24 mm2

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:29 ,  Issue: 12 )