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A design technique for a 60 GHz-bandwidth distributed baseband amplifier IC module

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6 Author(s)
T. Shibata ; NTT LSI Labs., Kanagawa, Japan ; S. Kimura ; H. Kimura ; Y. Imai
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A DC-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 μm InAlAs-InGaAs low-noise HEMTs with 155 GHz fT and 234 GHz fmax. The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces. The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth. A multichip module loaded with two amplifier ICs in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz. The 1 dB gain compression output power is about 5 dBm for both modules. The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range

Published in:

IEEE Journal of Solid-State Circuits  (Volume:29 ,  Issue: 12 )