By Topic

Polymer encapsulants for microelectronics: mechanisms for protection and failure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Anderson, J.E. ; Ford Motor Co., Dearborn, MI, USA ; Markovac, V. ; Troyk, P.R.

Electrochemical failure of microelectronics is related to surface impurity levels, to temperature, and to relative humidity (RH). Contamination-by-design experiments were performed in order to investigate the interplay among these factors. Under dry conditions (0% RH), leakage currents were found to be small (~1-10 pA) and insensitive to surface contamination levels, implying that electrochemical IC failure becomes vanishingly small under dry conditions. At 100% RH, steady-state leakage currents were large (~10-100 μA) and roughly proportional to surface loadings. Individual chemical compounds were found to exhibit step increases of leakage current at critical RH values corresponding to solid-to-saturated solution transitions. Aqueous droplets, or vacuoles, were seen visually at surface sites occupied by solid deposits. Variable-temperature studies, made on contaminated specimens at constant external water vapor partial pressure, exhibited a step decrease of leakage current at temperatures corresponding to the critical RH. Sucrose, a nonelectrolyte, showed leakage current steps similar to those observed with NaCl and CaCl2. Vacuole formation is considered in some detail

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:11 ,  Issue: 1 )