Referenced Items are not available for this document.
A model for the mechanism of negative photoresponse, i.e. the decrease of drain current under illumination, in AlGaAs/GaAs MODFETs (modulation-doped field--effect transistors) is presented. A comprehensive experimental study examining the dependence of this phenomena on gate-to-source bias voltage and optical power is also reported. The negative photoresponse is attributed to trapping of photogenerated carriers in the GaAs buffer layer, causing a change in the potential profile and a consequent reduction in the number of carriers in the 2-DEG (two-dimensional electron gas) channel.<
Published in:
Microwave Symposium Digest, 1993., IEEE MTT-S International
Date of Conference: 14-18 June 1993
- Page(s):
- 1403 - 1406 vol.3
- Meeting Date :
- 14 Jun 1993-18 Jun 1993
- ISSN :
- 0149-645X
- Print ISBN:
- 0-7803-1209-0
- INSPEC Accession Number:
- 4534272
- Conference Location :
- Atlanta, GA, USA
- Digital Object Identifier :
- 10.1109/MWSYM.1993.276735
- Product Type:
- Conference Publications
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