Cart (Loading....) | Create Account
Close category search window
 

A study on the negative photoresponse of AlGaAs/GaAs MODFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Romero, M.A. ; Drexel Univ., Philadelphia, PA, USA ; Herczfeld, P.R.

A model for the mechanism of negative photoresponse, i.e. the decrease of drain current under illumination, in AlGaAs/GaAs MODFETs (modulation-doped field--effect transistors) is presented. A comprehensive experimental study examining the dependence of this phenomena on gate-to-source bias voltage and optical power is also reported. The negative photoresponse is attributed to trapping of photogenerated carriers in the GaAs buffer layer, causing a change in the potential profile and a consequent reduction in the number of carriers in the 2-DEG (two-dimensional electron gas) channel.<>

Published in:

Microwave Symposium Digest, 1993., IEEE MTT-S International

Date of Conference:

14-18 June 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.