Cross-correlation measurement of the turn-on delay and pulsewidth of a Q-switched two-section semiconductor laser

Cross-correlation techniques were employed for direct optical measurement of output versus electrical bias for a Q-switched two-section semiconductor laser. Since the switching scheme is not limited by external connections to the device, the ultrafast dynamics of the diode laser can be investigated. In particular, a turn-on-delay as small as 70 ps was recorded with picosecond accuracy. The FWHM and peak power of the Q-switched pulse were also measured. A numerical simulation was performed, and good agreement with experimental results was achieved.<
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