Referenced Items are not available for this document.
An operational amplifier has been designed, fabricated, and tested at 350°C using silicon carbide MESFET pairs and thick-film hybrid technology. The amplifier was successfully tested over the temperature range of 25-350°C. The gain of the amplifier was greater than 60 dB, the common-mode rejection ratio was greater than 55 dB, and the offset voltage varied from 139 to 159 mV over the entire temperature range. The results demonstrate the feasibility of high-temperature circuit design and assembly using this approach
Published in:
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
(Volume:16
,
Issue:
5
)
Date of Publication: Aug 1993
- Page(s):
- 536 - 542
- ISSN :
- 0148-6411
- INSPEC Accession Number:
- 4598978
- Digital Object Identifier :
- 10.1109/33.239885
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug 1993
- Sponsored by :
- IEEE Components, Packaging, and Manufacturing Technology Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
