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1 GHz 50 mu W 1/2 frequency divider fabricated on ultra-thin SIMOX substrate

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8 Author(s)
M. Fujishima ; Dept. of Electron. Eng., Tokyo Univ., Japan ; M. Yamashita ; M. Ikeda ; K. Asada
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Frequency dividers were fabricated on SIMOX substrates with 50-nm SOI layer, 80-nm buried oxide, and gate oxide of 7-nm thickness. Typical drain current and voltage characteristics are given. It is shown that the 1/2 frequency divider can operate at 2.5 GHz, and its power dissipation is 50 mu W at 1 GHz. It is concluded that deep-submicron CMOS circuits on SOI structures are highly promising for low-power-dissipation applications.<>

Published in:

VLSI Circuits, 1992. Digest of Technical Papers., 1992 Symposium on

Date of Conference:

4-6 June 1992