Referenced Items are not available for this document.
An on-chip boosted power supply is necessary for ease of layout and high speed in high density DRAMs. The technique of TTL conversion is a key to designing high speed DRAMs for 3-V operation. The authors present the generation and regulation of an on-chip power supply (V/sub pp/) within 50 mV of the optimum level during operation for a given V/sub cc/. In addition to the regulated V/sub cc/ scheme, improved interface circuit techniques are employed to achieve fast input and output conversion with good noise margins. An experimental 64-Mb DRAM is designed. A typical access time of 35 ns is obtained by measurement.<
Published in:
VLSI Circuits, 1992. Digest of Technical Papers., 1992 Symposium on
Date of Conference: 4-6 June 1992
- Page(s):
- 64 - 65
- Meeting Date :
- 04 Jun 1992-06 Jun 1992
- Print ISBN:
- 0-7803-0701-1
- INSPEC Accession Number:
- 4427070
- Conference Location :
- Seattle, WA, USA
- Digital Object Identifier :
- 10.1109/VLSIC.1992.229238
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
