By Topic

A novel base emitter self-alignment process for high speed bipolar LSIs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Okita, Y. ; OKI Elect. Ind. Co., Ltd., Tokyo, Japan ; Shinozawa, M. ; Kawakatsu, A. ; Umemura, Y.
more authors

A novel base-emitter self-alignment process is described. It produces a transistor which has a cutoff frequency of 12 GHz. It provides 88 ps of propagation delay for an ECL (emitter-coupled logic) gate. The process is characterized by its extensive use of S i/sub 3/N/sub 4/. Utilizing Si/sub 3/N/sub 4/ as a multipurpose layer, the main structures (active region of transistor and resistor) are defined by self-alignment from a single photomask. In addition, constituent materials are chosen to have enough mutual selectivity under conventional etching processes. Therefore, the process has an excellent reproducibility with less strict requirements than standard etching technology.<>

Published in:

Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988

Date of Conference:

16-19 May 1988