By Topic

Simulation and modeling-new macro model for Zeners

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
A. H. Pawlikiewicz ; ASIC Technol. Group, Ford Motor Co., Dearborn, MI, USA ; G. Zack

A macro model of the 6.2-V 1N5920B Zener diode which very accurately represents the measured characteristics both in the DC and AC domain is presented. For users who do not have access to optimization software, the model can still be easily customised for other Zener diodes by replacing the emission coefficients (N), saturation currents (Is) and series resistance (Rs) under forward and reverse bias. One would also need to modify the temperature coefficient and measure the capacitance (CIO) at V/sub d/=0 V bias, to have a functional model of the Zener diode. However, there is no easy technique to extract the TT parameter without going through an extraction process. Therefore, without modification to the T1 parameter, one has to be careful when using the customized model for switching applications.<>

Published in:

IEEE Circuits and Devices Magazine  (Volume:9 ,  Issue: 2 )