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Comments, with reply, on 'Schottky contact effects in the sidegating effect of GaAs devices'

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4 Author(s)
Ayyar, S.G. ; Dept. of Electr. Eng., Lafayette Coll., Easton, PA, USA ; Yi Liu ; Dutton, R.W. ; Deal, M.D.

The commenter points out a discrepancy between the results in the above-titled paper (ibid., vol.13, p.149-51, 1992) and those of C.P. Lee et al. (ibid., vol. EDL-3, p.97-8, 1982). He emphasizes that trap-fill-limited (TFL) conduction and trap-impact ionization are important mechanisms causing high substrate leakage current and backgating effect of GaAs MESFETs. He suggests that the dependence of the backgating and leakage current threshold voltage V/sub BGT/ on the source-to-drain bias V/sub DS/ of the MESFET can be used to experimentally evaluate if the observed backgating effect and leakage current are caused by mechanisms related to n-i-n or Schottky-i-n structures. The authors, in reply, amplify on the commenter's remarks and explain the discrepancy.<>

Published in:

Electron Device Letters, IEEE  (Volume:13 ,  Issue: 10 )

Date of Publication:

Oct. 1992

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