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Silicon-carbide high-voltage (400 V) Schottky barrier diodes

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3 Author(s)
M. Bhatnagar ; Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA ; P. K. McLarty ; B. J. Baliga

The authors describe the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes. Measurements of the forward I-V characteristics of these diodes demonstrate a low forward voltage drop of approximately 1.1 V at an on-state current density of 100 A/cm/sup 2/ for a temperature range of 25 to 200 degrees C. The reverse I-V characteristics of these devices exhibit a sharp breakdown, with breakdown voltages exceeding 400 V at 25 degrees C. In addition, these diodes are shown to have superior reverse recovery characteristics when compared with high-speed silicon P-i-N rectifiers.<>

Published in:

IEEE Electron Device Letters  (Volume:13 ,  Issue: 10 )