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Interferometric measurement of the linewidth enhancement factor of a 1.55- mu m strained multiquantum-well InGaAs/InGaAsP amplifier

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6 Author(s)
J. Ehrhardt ; CREOL, Univ. of Central Florida, Orlando, FL, USA ; A. Villeneuve ; G. I. Stegeman ; H. Nakajima
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The linewidth enhancement factor of an InGaAs/InGaAsP strained multiquantum well optical amplifier was measured interferometrically. It varied from 3 to 18 over the wavelength range from 1500 to 1600 nm with injection currents varying from one to four times the lasing threshold of the uncoated device. A rate equation model gave differential gain and refractive index change per carrier, respectively, in the range 0.3 to 2.5*10/sup -15/ cm/sup 2/ and -5 to -8*10/sup -20/ cm/sup 3/.<>

Published in:

IEEE Photonics Technology Letters  (Volume:4 ,  Issue: 12 )