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Evaluation of piezoresistive coefficient variation in silicon stress sensors using a four-point bending test fixture

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5 Author(s)

The variation of the piezoresistive coefficients from several rosettes on the same die, the same wafer, and finally at different doping levels across a number of wafers was examined. A thorough error analysis of the method of applying a known uniaxial state of stress using a four-point bending (4PB) fixture was completed. A sensor error analysis demonstrated that it is very difficult to determine accurate values for the sum (π1112) using the common two-element rosette, particularly in p-type material. However, an empirical equation was found that provides an estimate for this coefficient. The second piezoresistive coefficient π44 can be measured accurately. However, the results presented for π44 differ from those of previous authors by some 33%. Thus, it appears necessary to measure this value for a given wafer lot

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:15 ,  Issue: 5 )

Date of Publication:

Oct 1992

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